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| hexfet ? power mosfet descriptionspecifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest pro- cessing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. advanced planar technology low on-resistance logic level gate drive dual p-channel mosfet dynamic dv/dt rating 150c operating temperature fast switching fully avalanche rated lead-free, rohs compliant automotive qualified* absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. so-8 auirf7342q d1 d1 d 2 d 2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss -55v r ds(on) max. 0.105 i d -3.4a parameter max. units v ds drain-source voltage -55 v i d @ t a = 25c continuous drain current, v gs @ -10v -3.4 i d @ t a = 70c continuous drain current, v gs @ -10v -2.7 i dm pulsed drain current -27 p d @t a = 25c power dissipation 2.0 p d @t a = 70c power dissipation 1.3 linear derating factor 0.016 mw/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10 s3 0 v e as single pulse avalanche energy 114 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter max. units r ja junction-to-ambient 62.5 c/w w a c -55 to + 150 automotive grade ! form quantity tube 95 auirf7342q tape and reel 2500 AUIRF7342QTR base part number package type standard pack orderable part number auirf7342q so-8 downloaded from: http:/// ! s d g notes: repetitive rating; pulse width limited bymax. junction temperature. ( see fig. 11 ) starting t j = 25c, l = 20mh, r g = 25 , i as = -3.4a. (see figure 8) i sd -3.4a, di/dt -150a/ s, v dd v (br)dss , t j 150c. pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -55 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC -0.054 CCC v/c CCC 0.095 0.105 CCC 0.150 0.170 v gs(th) gate threshold voltage -1.0 CCC -3.0 v gfs forward transconductance 3.3 CCC CCC s i dss drain-to-source leakage current CCC CCC -2.0 CCC CCC -25 i gss gate-to-source forward leakage CCC CCC -100 gate-to-source reverse leakage CCC CCC 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 26 38 q gs gate-to-source charge CCC 3.0 4.5 q gd gate-to-drain ("miller") charge CCC 8.4 13 t d(on) turn-on delay time CCC 14 22 t r rise time CCC 10 15 t d(off) turn-off delay time CCC 43 64 t f fall time CCC 22 32 c iss input capacitance CCC 690 CCC c oss output capacitance CCC 210 CCC c rss reverse transfer capacitance CCC 86 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC -1.2 v t rr reverse recovery time CCC 54 80 ns t j = 25c,i f = -2.0a q rr reverse recovery charge CCC 85 130 nc di/dt = 100a/ s -27 CCC CCC CCC CCC -2.0 i d = -1.0a r g = 6.0 r d = 16 v gs = 0v v ds = -25v ? = 1.0mhz, see fig. 9 na a a pf ns nc t j = 25c, i s = -2.0a, v gs = 0v integral reverse p-n junction diode. conditions mosfet symbol showing the v ds = -55v, v gs = 0v v ds = -55v, v gs = 0v, t j = 55c v gs = -10v, see fig. 10 conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -3.4a v gs = 20v v ds = -44v v dd = -28v r ds(on) static drain-to-source on-resistance v gs = -4.5v, i d = -2.7a conditions v ds = -10v, i d = -3.1a i d = -3.1a v gs = -20v v ds = v gs , i d = -250 a downloaded from: http:/// " ! 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -12v -10v -8.0v -4.5v -4.0v -3.5v bottom -3.0v 60 s pulse width tj = 25c -3.0v 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -3.0v 60 s pulse width tj = 150c vgs top -15v -12v -10v -8.0v -4.5v -4.0v -3.5v bottom -3.0v 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -12v -10v -8.0v -4.5v -4.0v -3.5v bottom -3.0v 60 s pulse width tj = -40c -3.0v 1 2 3 4 5 6 7 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c t j = 25c t j = 150c v ds = -25v 60 s pulse width downloaded from: http:/// ! -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v ! " # $ # 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a ( ) 0.05 0.15 0.25 0.35 0.45 2581 11 4 a gs -v , gate-to-source voltage (v) i = -3.4 a d downloaded from: http:/// # ! 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds $ # $% # % # 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -v sd , source-to-drain voltage (v) 1.0 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = -40c t j = 25c t j = 150c % & ' # fig 12. maximum safe operating area 1 10 100 -v ds , drain-tosource voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec downloaded from: http:/// $ ! " ( )* !+ 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 13. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - i d , d r a i n c u r r e n t ( a ) downloaded from: http:/// ! so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 43 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not es : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. con t r ol l i n g di me n s i on: mi l l i me t e r 3. dime ns ions are s hown in mill ime t e rs [inche s ]. 5 dime ns ion doe s not incl ude mold prot ru s ions . 6 dime ns ion doe s not incl ude mold prot ru s ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a s ubs t rat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] f7342q downloaded from: http:/// % ! 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) downloaded from: http:/// & ! ,- + ( . '+ / http//www.irf.com/ ,," !"-010 2 2 ,,,3 # # # qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m2 (+/- 200v) ??? aec-q101-002 human body model class h1a (+/- 500v) ??? aec-q101-001 downloaded from: http:/// ! unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold su bject to irs terms and conditions of sale supplied at the time of order acknowledgment.ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. exc ept where mandated by government requirements, testing of all parameters of each product is not necessarily performed.ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provide adequ ate design and operating safeguards.reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet m ilitary specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:/// ! date comments ? added "logic level gate drive" bullet in the features section on page 1 ? updated data sheet with new ir corporate template revision history 3/27/2014 downloaded from: http:/// |
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